发明名称 PLASMA PROCESSING DEVICE
摘要 <p>A plasma processing device, wherein an antenna part (3) driven by microwaves to generate electromagnetic field is disposed in an opening part at the top of a chamber (1), a top board (4) sealing the opening part of the chamber (1) is installed under the antenna part (3), a ring-shaped projected line (41) is formed on the lower surface of the top board (4), and the thickness of the projected line in the radial direction is continuously varied in a tapered shape to oscillate any part of the projected line in any conditions of plasma. Since the same effect can be provided as in a case in which top boards with different thicknesses are prepared by preparing merely one type of the top board, the plasma absorbing efficiency of the top board can be remarkably increased, and the plasma can be generated stably in a high to low pressure range.</p>
申请公布号 WO2005031830(A1) 申请公布日期 2005.04.07
申请号 WO2004JP12824 申请日期 2004.09.03
申请人 NOZAWA, TOSHIHISA;TOKYO ELECTRON LIMITED;ISHIBASHI, KIYOTAKA 发明人 NOZAWA, TOSHIHISA;ISHIBASHI, KIYOTAKA
分类号 H05H1/46;C23C16/511;H01L21/304;H01J37/32;(IPC1-7):H01L21/205;C23F4/00;H01L21/306 主分类号 H05H1/46
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