发明名称 THIN FILM TRANSISTOR ARRAY PANELS
摘要 A TFT(Thin Film Transistor) display panel is provided to form a stable channel which is not affected by surface characteristics. A semiconductor layer(150) is formed on an insulation substrate(110) and has a source region(153), a channel region(154) and a drain region(155). A gate insulation film(140) is formed on the semiconductor layer. A gate line is formed on the gate insulation film and has a gate electrode overlapped with the channel region. The first interlayer insulation film(601) is formed on the gate line and has the first and the second contact holes. A data line is formed on the first interlayer insulation film and has a source electrode(173) connected to the source region through the first contact hole. A drain electrode(175) is formed on the first interlayer insulation film and connected to the drain region through the second contact hole. The second interlayer insulation film(602) is formed on the data line and the drain electrode and has the third contact hole for exposing the drain electrode. A pixel electrode(190) is formed on the second interlayer insulation film and connected to the drain region.
申请公布号 KR20050032163(A) 申请公布日期 2005.04.07
申请号 KR20030068171 申请日期 2003.10.01
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JUNG, KWAN WOOK
分类号 G02F1/136;(IPC1-7):G02F1/136 主分类号 G02F1/136
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