发明名称 SEMICONDUCTOR DEVICE CONTAINING STACKED SEMICONDUCTOR CHIPS AND MANUFACTURING METHOD THEREOF
摘要 A semiconductor device and a manufacturing method thereof are provided to improve the adhesiveness between stacked semiconductor chips by using a plasma treated surface. A semiconductor device includes a first semiconductor chip(410) and a second semiconductor chip(430) on the first semiconductor chip. At this time, an upper surface of the first semiconductor chip is a plasma treated surface, so that the second semiconductor chip is loaded on the plasma treated surface. The plasma treated surface includes a surface of an adhesive layer(411).
申请公布号 KR20050031966(A) 申请公布日期 2005.04.06
申请号 KR20040077166 申请日期 2004.09.24
申请人 SANYO ELECTRIC CO., LTD. 发明人 MIZUHARA, HIDEKI;NAKAMURA, TAKESHI;USUI, RYOSUKE
分类号 H01L25/18;H01L21/98;H01L23/12;H01L25/065;H01L25/07 主分类号 H01L25/18
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