METHOD FOR MANUFACTURING LDD IN A SEMICONDUCTOR DEVICE

摘要

A method of fabricating an LDD(Lightly Doped Drain) region in a semiconductor device is provided to reduce proportion of hot carrier by performing repeatedly an ion implantation process to form the LDD region. A gate electrode is formed on a semiconductor substrate(100). A plurality of spacers(108a,108b) are formed on both sides of the gate electrode. A first LDD region is formed by performing an ion implantation process using the gate electrode as a mask. The LDD regions are continuously formed by performing the ion implantation processes using the gate electrode. The amount of ions for the ion implantation process is smaller than the amount of total ions for forming the LDD region.