| 发明名称 |
Semiconductor device |
| 摘要 |
The invention offers a highly reliable semiconductor device with high yields. The semiconductor device includes a silicon substrate, a gate insulating film formed on one main plane of a silicon substrate and mainly including zirconium oxide of hafnium oxide, and a gate electrode film formed in contact with the gate insulating film. The gate insulating film contains an additional element for stabilizing the amorphous state.
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| 申请公布号 |
US6875662(B2) |
申请公布日期 |
2005.04.05 |
| 申请号 |
US20030641123 |
申请日期 |
2003.08.15 |
| 申请人 |
HITACHI, LTD.;HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
IWASAKI TOMIO;MIURA HIDEO |
| 分类号 |
H01L21/283;H01L21/28;H01L21/316;H01L21/822;H01L27/04;H01L29/423;H01L29/49;H01L29/51;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/283 |
| 代理机构 |
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