发明名称 |
Method for producing ferroelectric capacitors and integrated semiconductor memory chips |
摘要 |
The invention relates to a method for producing ferroelectric capacitors that are structured using the stack principle and that are used in integrated semiconductor memory chips. The individual capacitor modules have an oxygen barrier between a lower capacitor electrode and an electrically conductive plug. At a site where it is not covered by the corresponding oxygen barrier, an unstructured adhesive layer is oxidized by the oxygen arising during the tempering process of the ferroelectric and forms insulating segments at the site in such a way that the lower capacitor electrodes of the ferroelectric capacitors are electrically insulated from one another. This makes it possible to dispense with structuring the adhesive layer. Furthermore, the layer serves as a getter of oxygen and inhibits the diffusion of oxygen to the plug.
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申请公布号 |
US6875652(B2) |
申请公布日期 |
2005.04.05 |
申请号 |
US20030638594 |
申请日期 |
2003.08.11 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
KASKO IGOR;KROENKE MATTHIAS;MIKOLAJICK THOMAS |
分类号 |
H01L27/105;H01L21/02;H01L21/768;H01L21/8246;H01L27/115;(IPC1-7):H01L21/824 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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