| 摘要 |
A technique for etching with a single layered patterned photomask at wavelengths of 193 nanometers or less. Specifically, a method for etching a bottom anti-reflectant coating layer that utilizes a combination of CF4, CH2F2, and O2 to produce a stabilized pattern in the photoresist layer. The etching process results in a structure with a defined pattern having minimal defects and that maintains integrity through the remainder of the etching. A second etching process implementing an etchant having a high dielectric to photoresist selectivity may be used to further etch underlying layers.
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