METHOD FOR FORMING CAPACITOR FOR USE IN SEMICONDUCTOR DEVICE

摘要

A method of forming a capacitor of a semiconductor device is provided to prevent inclination of storage node electrodes by supporting the storage node electrodes by a polysilicon layer. An etch stop layer(206) and first to third insulating layers are formed on a semiconductor substrate including an interlayer dielectric(202) and a storage node contact plug(204). A photoresist pattern is formed on the third insulating layer. A recess is formed to expose a part of the storage node contact plug. A tunnel is formed between the first and the third insulating layer by removing a part of the second insulating layer. A conductive layer is formed by performing a CVD(Chemical Vapor Deposition) process. A fourth insulating layer is formed to fill the recess. The remaining conductive layer is removed from the third insulating layer by performing a planarization process. A plurality of bridge-shaped storage node electrodes(212c) are formed by removing selectively the fourth, the third, and the first insulating layers. The storage node electrodes are separated from each other by removing the conductive layers for supporting the storage node electrodes. A dielectric layer is formed on the storage node electrode. A plate electrode facing the storage node electrodes is formed thereon.