| 发明名称 |
Memory device and its manufacturing method |
| 摘要 |
A memory device characterized in using changes in electric conductivity of a semiconductor substrate itself as different data.
|
| 申请公布号 |
US2005068822(A1) |
申请公布日期 |
2005.03.31 |
| 申请号 |
US20040858498 |
申请日期 |
2004.06.01 |
| 申请人 |
KIJIMA TAKESHI;INOUE SATOSHI |
发明人 |
KIJIMA TAKESHI;INOUE SATOSHI |
| 分类号 |
G11C11/22;G11C7/00;H01L21/8246;H01L27/105;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/22 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
