发明名称 |
Stacked RF power amplifier |
摘要 |
A method and apparatus provides techniques for electrically isolating switching devices in a stacked RF power amplifier, which prevents the switching devices from being subjected to high breakdown voltages. The isolation provided allows the power amplifier to be implemented on an integrated circuit.
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申请公布号 |
US2005068103(A1) |
申请公布日期 |
2005.03.31 |
申请号 |
US20030671016 |
申请日期 |
2003.09.25 |
申请人 |
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发明人 |
DUPUIS TIMOTHY J.;PAUL SUSANNE A. |
分类号 |
H03F1/52;H03F3/193;H03F3/21;H03F3/24;H03F3/42;(IPC1-7):H03F3/217 |
主分类号 |
H03F1/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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