| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device equipped with an excess current protection circuit capable of reducing an impact of the on-resistance of an output stage transistor. SOLUTION: If an output voltage outputted from a buffer 3 approaches an earth voltage, a MOS transistor Tn2 is turned off, and clamping to a gate of a MOS transistor Tn is released. COPYRIGHT: (C)2005,JPO&NCIPI
|
