| 发明名称 |
POLYCRYSTALLINE MEMORY STRUCTURE, METHOD FOR FORMING SAME STRUCTURE, AND SEMICONDUCTOR MEMORY DEVICE USING SAME STRUCTURE |
| 摘要 |
The invention provides a polycrystalline memory structure comprising: a polycrystalline memory layer (18) overlying a substrate (14) and having crystal grain boundaries forming gaps (20) between adjacent crystallites; and an insulating material (24) at least partially within the gaps. |
| 申请公布号 |
KR100479520(B1) |
申请公布日期 |
2005.03.31 |
| 申请号 |
KR20030012261 |
申请日期 |
2003.02.27 |
| 申请人 |
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发明人 |
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| 分类号 |
H01L21/8239;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/8239 |
| 代理机构 |
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