Absorptive resists in an extreme ultraviolet (EUV) imaging layer

摘要

An embodiment of the present invention includes a technique to provide a highly absorptive resist. A resist is formed using a highly absorbing material. The resist is thinned to a pre-determined thickness used as an imaging layer. The efficiency of a photoactive acid generator (PAG) is improved to capture secondary electrons produced by an ionizing radiation in the resist.