发明名称 METHOD FOR DESIGNING PHOTOMASK, PHOTOMASK AND PROGRAM
摘要 <p><P>PROBLEM TO BE SOLVED: To decrease the data quantity for correction of a pattern obliquely disposed in patterns for drawing a mask pattern on a photomask while maintaining the accuracy almost equal to correction of a pattern disposed in parallel. <P>SOLUTION: In correcting a reference pattern disposed in parallel arrangement, edges of the reference pattern is divided into many regions, and each region is corrected by shifting the edge by the correction amount preliminarily determined. In correcting a reference pattern in an oblique arrangement, the edge of the reference pattern is divided into two regions of a proximity region and a remote region, and each region is corrected by shifting the edge by the correction amount preliminarily determined. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005084280(A) 申请公布日期 2005.03.31
申请号 JP20030315037 申请日期 2003.09.08
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 TABATA YASUKO;WATANABE HISASHI
分类号 G03F1/36;G03F1/68;H01L21/027;(IPC1-7):G03F1/08 主分类号 G03F1/36
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