| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus and a processing method which can obtain size after accurate trimming, on the basis of the amount of roughness of mask edge or amount of radical in the plasma. SOLUTION: The etching apparatus has the functions of carrying a wafer formed on its surface with a mask for etching of the desired pattern into a plasma etching processing chamber 103, and to form fine lines of mask through the trimming process with the etching effect of the plasma. This etching apparatus is provided with a plasma monitor 14 for measuring amount of radical in the plasma processing chamber; and a trimming condition calculating means 16 for calculating the time required for the trimming process to obtain the desired mask width, on the basis of the width size of pattern mask measured previously, amount of roughness of mask edge, and amount of radical measured with the plasma monitor 14. Accordingly, the trimming process is conducted for the trimming time calculated by the trimming condition calculating means 16. COPYRIGHT: (C)2005,JPO&NCIPI
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