发明名称 METHOD OF FORMING THIN FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method of forming thin film by which the occurrence of particles can be reduced during the course of forming a thin film on the surface of a substrate without giving any variation to the thin film. SOLUTION: The method of forming thin film includes a step (S2) of inserting a boat 2 on which the substrate 1 is placed in the main body 100 of a furnace and hermetically sealing the main body 100, a step (S3) of maintaining the inside of the main body 100 in an atmospheric state until the thermal expansion of the substrate 1 is saturated, and steps (S4 and S5) of evacuating the inside of the main body 100. The method also includes a step (S8) of forming the thin film on the surface of the substrate 1 through a chemical reaction by supplying a gas which becomes the film forming material into the main body 100. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005085794(A) 申请公布日期 2005.03.31
申请号 JP20030312758 申请日期 2003.09.04
申请人 SEIKO EPSON CORP 发明人 ITO TAKESHI
分类号 C23C16/52;H01L21/205;(IPC1-7):H01L21/205 主分类号 C23C16/52
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