发明名称 |
Thin film forming apparatus and method of cleaning the same |
摘要 |
The present invention relates to a technique for cleaning a thin film forming apparatus. In a typical embodiment, deposits originating from process gases for forming a thin film and deposited on the inner surface of a reaction tube are removed by etching by supplying a cleaning gas into the reaction tube while heating the interior of the reaction tube at a predetermined temperature. The inner surface of the reaction tube roughened by etching is subjected to a planarizing step. The planarizing step is performed by supplying a gas containing hydrogen fluoride into the reaction tube while keeping the interior of the reaction tube 2 at a low temperature, such as a room temperature. The planarizing step is effective in preventing the reduction of deposition rate in a thin film forming process.
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申请公布号 |
US2005066993(A1) |
申请公布日期 |
2005.03.31 |
申请号 |
US20040927415 |
申请日期 |
2004.08.26 |
申请人 |
HASEBE KAZUHIDE;OKADA MITSUHIRO;KOTSUGAI HIROMICHI |
发明人 |
HASEBE KAZUHIDE;OKADA MITSUHIRO;KOTSUGAI HIROMICHI |
分类号 |
H01L21/304;B08B3/12;B08B6/00;B08B7/00;C23C16/44;H01L21/205;H01L21/3065;(IPC1-7):B08B3/12 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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