SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

A semiconductor device, particularly one in which the main current flows in the thickness direction of its semiconductor substrate. A semiconductor device in which the main current flows in the thickness direction of its semiconductor substrate has desired electric characteristics when semiconductor elements with different functions are disposed adjacently. In the second major surface (MS2) of a semiconductor substrate (901), P-type semiconductor regions (912) and N-type semiconductor regions (913) are alternately formed with spacings between them. In the surface of the semiconductor substrate (901), a trench isolating structure (911) formed with an insulator (914) embedded in a trench is provided in each spacing. A second main electrode (916) is so disposed as to be in contact with the P-type semiconductor regions (912) and the N-type semiconductor regions (913).