| 摘要 |
PROBLEM TO BE SOLVED: To provide a high frequency circuit which adds a broadband matching circuit to the device equivalent output terminal Te of a device FET to attain the power matching and the efficiency over a broader band. SOLUTION: A resonance matching circuit 10a is connected to the output terminal Te of an FET, and a resonance circuit 10b is connected between the matching circuit 10a and the Te. It causes resonance with a drain-source capacitance component Cds at anωto cancel a Cds reactance component Xds. Without changing the value of the reactance components of an L1 parallel connected capacitance Cs and a series impedance functional inductance L1 in the circuit 10b at theω, the resonance frequency with L1 and Cs is changed to adjust the third harmonic while the Te impedance Zk seen from a load resistance at theωis set constant, thus controlling the matching at theωand at the third harmonic independently. COPYRIGHT: (C)2005,JPO&NCIPI
|
