| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a grain-boundary-insulated type laminating semiconductor capacitor whose reoxidizing process has a reoxidizing condition of suppressing the oxidation of Ni and provide the grain-boundary-insulated type laminating semiconductor capacitor which has no oxidation of Ni and has an excellent electric characteristic. SOLUTION: A semiconductor ceramic material is the composition containing its main component of (Sr<SB>1-x-y</SB>Ca<SB>x-y</SB>Y<SB>y</SB>)<SB>m</SB>(Ti<SB>1-z</SB>Nb<SB>z</SB>)O<SB>3</SB>and its one or more kinds of auxiliary components selected from among V oxide, Mo oxide, and W oxide the mol ratio of whose baked-off summed quantity to its main component falls in the scope of 0.1-0.5 mol%. The manufacturing method of the grain-boundary-insulated type laminating semiconductor capacitor has a baking process for baking the laminate comprising the layer formed out of the foregoing semiconductor ceramic material and Ni inner-electrode layer, a reoxidizing-substance giving process for giving reoxidizing substances to the laminate, and a process for reoxidizing the given-off laminate. In this manufacturing method, the reoxidizing process is the heat-treatment process whose reoxidizing condition in a nitrogen atmosphere satisfies the formula of -40Ln(α)+993≤β≤-40Ln(α)+1193, 1≤α≤1000, and 800≤β. COPYRIGHT: (C)2005,JPO&NCIPI
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