| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel field effect organic transistor having high durability against external disturbance. SOLUTION: The field effect transistor has respective electrodes of a source electrode, a drain electrode, and a gate electrode; a gate insulating layer; and an organic semiconductor layer. The field effect transistor is further adapted such that the organic semiconductor layer comprises the single molecular film of a hydrogen bonded network polymer containing the organic semiconductor substance or the laminate of the single molecular films. The single molecular film or its laminate is preferably formed by a Langmuir-Blodgett method using a solution containing the organic semiconductor substance and the hydrogen bonded network polymer. COPYRIGHT: (C)2005,JPO&NCIPI
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