发明名称 METHOD OF MANUFACTURING THERMOELECTRIC SEMICONDUCTOR COMPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing thermoelectric semiconductor composition for improving conversion efficiency, using a multiple-level heat treatment processing. SOLUTION: The p-type thermoelectric semiconductor composition is manufactured at least with the steps of a powder treatment process for obtaining fine powder of a p-type substance comprising bismuth, antimony, and tellurium; a temporary molding treatment process for obtaining a temporary molding by press-molding of the fine powder obtained by the powder treatment process under normal temperature; a heat treatment process for obtaining a sintered material, by conducting multiple-level heat treatment under the temperature of 400°C±50°C at least for 10 hours, and at the temperature of 600°C±5°C for an hour on the temporary molding material obtained in the temporary molding treatment process in an inert gas atmosphere; a hot extrusion treatment process for obtaining the sintered molding material through the hot extrusion molding to the predetermined shape under a temperature condition of 400°C±10°C; and an annealing treatment process for annealing the sintered molding material, by conducting the heat treatment at a temperature of 300°C±10°C at least for 10 hours in the inert gas atmosphere. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005085873(A) 申请公布日期 2005.03.31
申请号 JP20030313988 申请日期 2003.09.05
申请人 SPETSIALNOE KONSTRUKTORSKO-TEKHNOLOGICHESKOE BJURO NORUDO 发明人 SERGEJ SKIPIDAROV;OLEG SOKOLOV
分类号 B22F3/10;H01L35/16;H01L35/34;(IPC1-7):H01L35/34 主分类号 B22F3/10
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