SIMULATION MODEL, DEVICE, AND METHOD FOR DESIGNING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a simulation model for designing a semiconductor device estimating or reproducing the operation of a semiconductor device in practically acceptable time and with high precision, by improving the analytical precision of behavior of carriers in a source, a drain and a channel. SOLUTION: Between the source and the drain, at least a portion of a difference between a carrier density described in a quasi-static steady state at a first time, and a carrier density described in a transient state at a second time preceding the first time, is added to the carrier density of the second time, depending on carriers' delay between the first time and the second time, and the carrier density of the first time is described in a transient state. A transient current between the source and the drain is described as the total of a steady-state current and a displacement current regarding as a time variation proportion of a quasi-static carrier density between the source and the drain. Assuming that the quasi-static carrier density satisfies the transient current, the quasi-static carrier density is described as a non-quasi-static model. COPYRIGHT: (C)2005,JPO&NCIPI