发明名称 |
Deep trench structure manufacturing process |
摘要 |
Disclosed is a method for manufacturing deep trench structure comprising the steps of providing a substrate; forming a deep trench in the substrate; forming a nitride layer in the deep trench; filling the deep trench with a first polymer; removing a portion of the nitride layer not covered by the first polymer; refilling the deep trench with another nitride layer so that the sidewall of the deep trench not covered by the first polymer, is covered; removing unnecessary portion of the refilled nitride layer; forming a collar oxide layer in the deep trench; filling the deep trench with a second polymer; removing a portion of the collar oxide layer not covered by the second polymer; and filling the deep trench with a third polymer.
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申请公布号 |
US2005070065(A1) |
申请公布日期 |
2005.03.31 |
申请号 |
US20030671461 |
申请日期 |
2003.09.29 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
HSU PING;WU KUO-CHIEN |
分类号 |
H01L21/334;H01L21/8242;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/334 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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