发明名称 Deep trench structure manufacturing process
摘要 Disclosed is a method for manufacturing deep trench structure comprising the steps of providing a substrate; forming a deep trench in the substrate; forming a nitride layer in the deep trench; filling the deep trench with a first polymer; removing a portion of the nitride layer not covered by the first polymer; refilling the deep trench with another nitride layer so that the sidewall of the deep trench not covered by the first polymer, is covered; removing unnecessary portion of the refilled nitride layer; forming a collar oxide layer in the deep trench; filling the deep trench with a second polymer; removing a portion of the collar oxide layer not covered by the second polymer; and filling the deep trench with a third polymer.
申请公布号 US2005070065(A1) 申请公布日期 2005.03.31
申请号 US20030671461 申请日期 2003.09.29
申请人 NANYA TECHNOLOGY CORPORATION 发明人 HSU PING;WU KUO-CHIEN
分类号 H01L21/334;H01L21/8242;(IPC1-7):H01L21/824 主分类号 H01L21/334
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