Mask used in photolithographic process for manufacturing integrated circuits, has absorbent layer with more readily-etched layer near substrate

摘要

The absorbent layer has various regions. The region near the substrate has a greater etching rate than that lying above it. Of several layers, an absorbent layer includes chromium. One of the layers is anti-reflective and contains CrOx. A dry etching process is used, in an oxygen-containing plasma. An independent claim is included for the corresponding method.