发明名称 DEPOSITING METHOD FOR INORGANIC ALIGNMENT LAYER, INORGANIC ALIGNMENT LAYER, SUBSTRATE FOR ELECTRONIC DEVICE, LIQUID CRYSTAL PANEL, AND ELECTRONIC EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To provide an inorganic alignment layer having excellent light fastness and capable of generating a pretilt angle, to provide a substrate for an electronic device, a liquid crystal panel and the electronic equipment provided with the inorganic alignment layer and to provide a depositing method for the inorganic alignment layer. SOLUTION: In the depositing method for the inorganic alignment layer wherein the inorganic alignment layer is deposited on a base material, a target provided opposite to the base material is irradiated with an ion beam to pull out sputtering particles, the base material is irradiated with the sputtering particles from a direction inclined at a prescribed angleθ<SB>s</SB>to the vertical direction of the surface of the base material on which the inorganic alignment layer is to be deposited and the inorganic alignment layer constituted principally of an inorganic material is deposited on the base material. The prescribed angleθ<SB>s</SB>is≥40°. The pressure of an atmosphere when the inorganic alignment layer is deposited is≤10<SP>-2</SP>Pa. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005084146(A) 申请公布日期 2005.03.31
申请号 JP20030313319 申请日期 2003.09.04
申请人 SEIKO EPSON CORP 发明人 OTA HIDENOBU;ENDO YUKIHIRO;SAKAMOTO KAZUYA;SAITO HIROMI
分类号 G02F1/13;C03C17/34;C23C14/46;G02F1/1337;(IPC1-7):G02F1/133 主分类号 G02F1/13
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