发明名称 |
STUD FORMATION FOR MRAM MANUFACTURING |
摘要 |
A method of fabricating a magnetic memory cell and an MRAM structure. A thin conductive hard mask is used to pattern a magnetic stack material layer. Conductive studs are fully landed on the top surface of the thin conductive hard mask, preventing the magnetic memory cells from being exposed subsequent etchant chemistries. The conductive studs provide a large process window for the upper level wiring trench formation, and also provide etch selectivity during the patterning of the upper level wiring. |
申请公布号 |
WO2004114373(A3) |
申请公布日期 |
2005.03.31 |
申请号 |
WO2004EP06626 |
申请日期 |
2004.06.18 |
申请人 |
INFINEON TECHNOLOGIES AG;LEE, GILL, YONG |
发明人 |
LEE, GILL, YONG |
分类号 |
H01L21/00;H01L21/8246;H01L27/22;H01L43/12 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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