ION-SENSITIVE FIELD EFFECT TRANSISTOR AND A METHOD FOR PRODUCING A TRANSISTOR OF THIS TYPE,申请号EP20020701271-传众专利搜索

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发明名称	ION-SENSITIVE FIELD EFFECT TRANSISTOR AND A METHOD FOR PRODUCING A TRANSISTOR OF THIS TYPE
摘要
申请公布号	EP1436607(B1)	申请公布日期	2005.03.30
申请号	EP20020701271	申请日期	2002.02.11
申请人	FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DERANGEWANDTEN FORSCHUNG E.V.	发明人	GRUEGER, HEINRICH;KUNATH, CHRISTIAN
分类号	A61K31/415;A61K9/20;A61K31/495;A61K31/54;A61K31/635;G01N27/414;(IPC1-7):G01N27/414	主分类号	A61K31/415
代理机构		代理人
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