发明名称 |
SPUTTERING TARGET |
摘要 |
A sputtering target which is formed from a material comprising silicon carbide and silicon, and has a volume percentage of silicon carbide of 50 to 70 %, wherein the volume percentage of silicon carbide is represented by the formula: volume percentage of silicon carbide (%) = total volume of silicon carbide/(total volume of silicon carbide + total volume of silicon) X 100. The sputtering target allows the adjustment over a widened range of the refractive index of the resultant coating layer through the control of the flow rate of an oxygen gas or a nitrogen gas or the control of the electric power to be infused.
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申请公布号 |
KR20050030642(A) |
申请公布日期 |
2005.03.30 |
申请号 |
KR20057001654 |
申请日期 |
2005.01.28 |
申请人 |
BRIDGESTONE CORPORATION |
发明人 |
ENDO, SHIGEKI;KUMAGAI, SHO;ODAKA, FUMIO |
分类号 |
C23C14/34;(IPC1-7):C04B35/56 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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