| 摘要 |
A bias circuit according to the present invention includes a monitoring circuit having a second FET and a resistance connected to a drain of the second FET for monitoring a drain current of a first FET to be supplied with a gate bias; a differential circuit including a third FET having a gate supplied with a reference voltage, a fourth FET having a gate connected to the drain of the second FET, sources of the third FET and the fourth FET being connected to a common point, and resistances connected to drains of the third FET and the fourth FET, respectively; and a fifth FET having a drain connected to the common source of the third FET and the fourth FET; wherein a drain voltage of the third FET is fed back to gates of the first FET and the second FET, and a drain voltage of the fourth FET is fed back to a gate of the fifth FET.
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