发明名称 Laser irradiation apparatus and method of fabricating a semiconductor device
摘要 There is provided an optical system for reducing faint interference observed when laser annealing is performed to a semiconductor film. The faint interference conventionally observed can be reduced by irradiating the semiconductor film with a laser beam by the use of an optical system using a mirror of the present invention. The optical system for transforming the shape of the laser beam on an irradiation surface into a linear or rectangular shape is used. The optical system may include an optical system serving to convert the laser beam into a parallel light with respect to a traveling direction of the laser beam. When the laser beam having passed through the optical system is irradiated to the semiconductor film through the mirror of the present invention, the conventionally observed faint interference can be reduced. Besides, the optical system which has been difficult to adjust can be simplified.
申请公布号 US6872910(B2) 申请公布日期 2005.03.29
申请号 US20030406293 申请日期 2003.04.04
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 TANAKA KOICHIRO;NAKAYA TOMOKO
分类号 B23K26/06;B23K26/067;B23K26/073;G02B27/09;H01L21/20;H01L21/268;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;H01S3/00;H01S5/00;H01S5/40;(IPC1-7):B23K26/00 主分类号 B23K26/06
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