发明名称 RADIATION DETECTOR
摘要 A radiation detector is provided to prevent defects of a semiconductor film caused by a stacked structure of a common electrode and a semiconductor substrate. A radiation detector includes a semiconductor film sensitive to a radiation ray and a common electrode(2). The common electrode(2) is used for applying bias voltage. The bias voltage is stacked in the shape of a face on the surface of the semiconductor film. The radiation detector generates charges in the inside of the semiconductor film. The radiation detector includes a matrix substrate(3). A plurality of collection electrodes are formed on the surface of the substrate(3). An electric circuit for stacking and reading charges collected from the collection electrodes is wired on the substrate(3).
申请公布号 KR20050030115(A) 申请公布日期 2005.03.29
申请号 KR20040074980 申请日期 2004.09.20
申请人 SHIMADZU CORPORATION;SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.;YAMANASHI ELECTRONICS CO., LTD. 发明人 SATO, KENJI;SHIMURA, YOICHIRO;TSURUTA, HIDEO;WATADANI, KOJI
分类号 G01T1/24;A61B6/00;G01J1/02;H01L27/14;H01L27/146;H01L31/0224;H01L31/08;H01L31/09;H01L31/115;(IPC1-7):G01T1/24 主分类号 G01T1/24
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