| 发明名称 |
Compound semiconductor switching device for high frequency switching |
| 摘要 |
A compound semiconductor switching device is based on a designing guideline that isolation should be assured by reducing the gate width of switching FET, thereby reducing the capacitance of the FET. Proper isolation between the two signal passes IS obtained with a FET gate width of about 700 mum or smaller at a signal frequency of about 2.4 GHz or higher, without employing a shunt FET.
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| 申请公布号 |
US6873828(B2) |
申请公布日期 |
2005.03.29 |
| 申请号 |
US20010855030 |
申请日期 |
2001.05.15 |
| 申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
ASANO TETSURO;HIGASHINO TAKAYOSHI;HIRATA KOICHI |
| 分类号 |
H01L21/338;H01L21/8232;H01L27/06;H01L29/812;H01P1/15;H03K17/00;H03K17/041;H03K17/693;(IPC1-7):H04B1/44 |
主分类号 |
H01L21/338 |
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