| 摘要 |
This manufacturing method of a semiconductor device prepares a lead frame to which a heat spreader, and the tip parts of a plurality of inner leads were joined via a thermoplastic insulating binding material, arranges a lead frame on a heat stage, and joins the semiconductor chip to the heat spreader via the thermoplastic binding material which was heated and softened after having arranged the semiconductor chip on the heat spreader. Die bonding can be performed without scattering inner leads by joining the semiconductor chip and the thermoplastic binding material, suppressing the tip parts of the inner leads to the heat stage side. Improvement in the assembling property of a semiconductor device can be aimed at. |
