发明名称 |
Semiconductor device and fabrication method of thereof |
摘要 |
A semiconductor device and a fabrication method thereof in which the semiconductor device includes capacitors having a metal/insulator/metal (MIM) structure are disclosed. The method includes forming an interlayer insulating film on a structure of a semiconductor substrate that exposes lower wiring and a lower insulating film; selectively etching the interlayer insulating film to form a first electrode opening that exposes the lower wiring; forming a first electrode in the first electrode opening such that the first electrode opening is filled; selectively etching the interlayer insulating film at a region of the same adjacent to the first electrode to thereby form a second electrode opening; forming a dielectric layer along inner walls that define the second electrode opening; forming a second electrode on the dielectric layer in such a manner to fill the second electrode opening; and forming upper wiring on at least a portion of the second electrode. |
申请公布号 |
KR100478480(B1) |
申请公布日期 |
2005.03.28 |
申请号 |
KR20020045023 |
申请日期 |
2002.07.30 |
申请人 |
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发明人 |
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分类号 |
H01L27/108;H01L21/02;H01L21/768;H01L23/522;H01L27/01;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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