A FABRICATION METHOD OF A SEMICONDUCTOR CAPACITOR HAVING A DIFFUSION-PREVENTING LAYER

摘要

A method of fabricating a semiconductor capacitor having a diffusion barrier is provided to reduce leakage current by eliminating a La-silicate layer from an interface between a bottom electrode and a barrier layer. A bottom electrode(105) is formed on an upper surface of a semiconductor substrate(100). A diffusion barrier(118) is formed on the entire surface of the bottom electrode. A dielectric layer(119) is formed on the diffusion barrier. A thermal process is performed on the semiconductor substrate including the dielectric layer, the diffusion barrier, and the bottom electrode. A top electrode(130) is formed to cover the bottom electrode having the dielectric layer. The diffusion barrier is formed by stacking a barrier layer(113) and an insertion layer(116).