RADIATION DETECTOR

摘要

The radiation detector according to this invention has a common electrode for bias voltage application formed on a surface of an amorphous selenium semiconductor film (a-Se semiconductor film) sensitive to radiation. The common electrode is a gold thin film having a thickness in a range of 100 to 1,000.ANG.. The gold thin film acting as the common electrode may be formed on the surface of the a-Se semiconductor film at a relatively low vapor deposition temperature and in a reduced vapor deposition time. This feature suppresses a generation of defects in the a-Se semiconductor film due to formation of the common electrode. The gold thin film for the common electrode is not so thick as in the prior art, but is 1,000.ANG. or less. With the reduced thickness, the common electrode has improved boding property with respect to the a-Se semiconductor film.