| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device, in particular a resonant cavity light emitting device. <P>SOLUTION: The light emitting device includes a resonant cavity formed by a reflective metal layer and a distributed Bragg reflector. Light is extracted from the resonant cavity through the distributed Bragg reflector. A light emitting region sandwiched between a layer of a first conductive type layer and a second conductive type layer is disposed in the resonant cavity. In some embodiments, a first and a second contacts are formed at the same side of the resonant cavity, forming a flip chip device or an epitaxy up device. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
