MAGNETORESISTIVE SENSOR IN THE FORM OF A HALF- OR FULL-BRIDGE CIRCUIT

摘要

Magnetoresistive sensors based on the AMR or GMR effect exhibit substantially enlarged linear characteristic curve regions as a result of the fact that their resistances are composed of magnetoresistive layer strips of differing anisotropic forms. Differing anisotropic forms can be achieved by different strip widths, strip thicknesses, strip intervals or strip materials. The temperature compensation for the output voltage of the magnetoresistive sensors, at least at one point on the characteristic curve, is achieved by the series connection of an additional layer strip with a temperature coefficient that differs from that of the magnetoresistive material to at least one magnetoresistive resistance of the sensor.