PECVD SILICON-RICH OXIDE LAYER FOR REDUCED UV CHARGING IN AN EEPROM

摘要

A Si-rich silicon oxide layer (500) having reduced UV transmission is deposited by PECVD, on an interlayer dielectric (300) , prior to metallization, thereby reducing Vt. Embodiments include depositing a UV opaque Si-rich silicon oxide layer (500) having a refractive index (R.I.) of 1.7 to 2.0. The Si-rich silicon oxide layer (SiRo) reduces UV cell charging problems in the fabrication of EEPROM flash memories.