| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an organic thin film transistor capable of allowing a much more current to flow by controlling by means of a double gate structure. <P>SOLUTION: An field-effect organic thin film transistor where a lower section gate electrode 12 and a first gate insulating film 13 formed so as to cover the lower section gate electrode 12 disposed on an insulative substrate, and a pair of the electrodes 14, 15 formed at the position to sandwich the lower section gate electrode 12, and an active layer 16 comprising an organic semiconductor film formed so as to cover the pair of the electrodes 14, 15 disposed on the first gate insulating film 13 are sequentially formed, wherein the transistor has a second gate insulating film 17 formed on the active layer 16 and an upper gate electrode 18 formed so as to be opposite to the lower gate electrode 12 on a second gate insulating film 17 disposed on the second gate insulating film 17. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
