| 发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent a single-crystal Si device from being damaged due to an energy beam for polycrystalline Si thin film formation in a semiconductor device having a single-crystal Si device formed by transfer on an insulating substrate made of glass or the like and a polycrystalline Si device formed by film formation or the like on the insulating substrate. <P>SOLUTION: A single-crystal Si substrate 10a having a single-crystal Si thin-film transistor 16a and a hydrogen ion-implanted region 15 is bonded onto an insulating substrate 2. Before the peeling of a silicon piece 11 of the single-crystal Si substrate 10a from the hydrogen ion-implanted region 15, an amorphous Si thin film 5 formed by catalytic CVD is modified into a polycrystalline Si thin film 5' by excimer laser irradiation. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
| 申请公布号 |
JP2005079384(A) |
申请公布日期 |
2005.03.24 |
| 申请号 |
JP20030308859 |
申请日期 |
2003.09.01 |
| 申请人 |
SHARP CORP |
发明人 |
ITOGA TAKASHI;TAKATO YUTAKA |
| 分类号 |
H01L21/20;H01L21/02;H01L21/336;H01L21/60;H01L27/12;H01L29/786;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/20 |
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