| 摘要 |
PROBLEM TO BE SOLVED: To solve problem that damage from peeling and damage at the time of transfer to an exclusive tool become problems when peeling heat treatment is performed, and a bonding section is forcedly peeled by the exclusive tool while one portion is not peeled in a once peeled wafer, productivity is deteriorated by sheet treatment, and costs are increased. SOLUTION: In a separation method of a laminated wafer using a hydrogen ion implantation separation method, a laminated wafer 2 is erected and placed at a linear projection 5 formed at the center of the bottom surface of a support groove 3 for retaining a recess at an edge beveling section 4 of the wafer for performing peeling heat treatment, thus peeling the laminated wafer placed on the projection at an ion implantation section by heat treatment and preventing the wafers from being bonded again by sandwiching the projection after peeling. The wafer that is partially peeled by the peeling heat treatment does not need to be forcedly peeled in the next process, and an SOI wafer and the peeled wafer can be collected only in a peeling heat treatment process. COPYRIGHT: (C)2005,JPO&NCIPI
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