| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve the operation speed of a destructive read type memory device. <P>SOLUTION: This memory device has a first cell group C4, a second cell group C0 and a third cell group C1 each provided with a plurality of cells 30 each used for recording either of a first logical value (0) and a second logical value (1); and the first logical value (0) is recorded in each cell by a data reading operation from the cell. The first cell group, the second cell group, and the third cell group are so structured as to be driven independently of one another; and the first logical value (0) is previously recorded in each cell of at least the first cell group C4. In reading data from the second cell group C0, the read data are recorded in each cell of the first cell group C4. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
