发明名称 Systems and methods for laser-assisted plasma processing
摘要 A controllable heat source, such as a laser or flame torch, can be used to pre-heat a portion of the surface of a workpiece, such as a glass optic or semiconductor wafer. Reactive atom plasma (RAP) processing can be used to modify the pre-heated surface portion, as the pre-heated material will more readily chemically combine with the atomic radicals of the precursor in the plasma. A RAP torch, such as an ICP plasma torch, MIP plasma torch, or flame torch, can be used to shape, polish, etch, planarize, deposit, chemically modify and/or redistribute material on the surface of the workpiece. The material modified by the torch can substantially correspond to the pattern or portion of the surface that was pre-heated by the heat source. This description is not intended to be a complete description of, or limit the scope of, the invention. Other features, aspects, and objects of the invention can be obtained from a review of the specification, the figures, and the claims.
申请公布号 US2005061783(A1) 申请公布日期 2005.03.24
申请号 US20040913739 申请日期 2004.08.06
申请人 RAPT INDUSTRIES, INC. 发明人 KELLEY JUDE;CARR JEFFREY W.;FISKE PETER S.
分类号 B08B7/00;C03C15/00;C03C23/00;C04B41/53;C04B41/91;G02B6/136;H05H1/30;(IPC1-7):B23K10/00 主分类号 B08B7/00
代理机构 代理人
主权项
地址