| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress cracks generated on an interlayer insulation film between wiring by an impact at the time of wire bonding. <P>SOLUTION: A semiconductor device is provided with an electrode 4 composed of a conductive layer, an external terminal 8 composed of the conductive layer formed on the electrode 4 and the wiring layer 3 of a different potential holding an insulation layer 5 therebetween on the lower part of the electrode 4, and a low dielectric constant film layer 12 is embedded in the electrode 4. Thus, stress applied to the lower part of the external terminal 8 is dispersed by the low dielectric constant film layer 12 formed in the electrode for the impact of wire bonding to the external terminal 8. Thus, in the case of forming the wiring of different potential below the external terminal 8 in a semiconductor assembling process, the cracks generated in the insulation film 5 formed between the electrode 4 of an upper layer and the wiring layer 3 of a lower layer by the stress at the time of wire bonding are suppressed. As a result, leakage between the electrode 4 of the upper layer and the wiring layer 3 of the lower layer is prevented from occurring. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
