| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device that can realize a low resistance in a embedded strap area and take measures for failure by a low-temperature wafer test without degrading the characteristic of a cell transistor. <P>SOLUTION: The semiconductor memory device is provided with a semiconductor substrate 11 provided with a first conductive type, a deep trench capacitor 14 that is formed in the semiconductor substrate and is provided with an insulating film, an element isolation area 15 that is formed in the semiconductor substrate in a manner to bridge between the trench capacitor and another trench capacitor adjacent thereto, a source or drain area 16 that is formed in the semiconductor substrate and is provided with a second conductive type formed adjacent to the trench capacitor, and a surface strap area 22 that is formed on the surface of the semiconductor substrate in a manner to bridge between the trench capacitor and the source or drain area. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
