| 摘要 |
PROBLEM TO BE SOLVED: To decrease contact resistance in a transistor. SOLUTION: A gate insulating film and a gate electrode are formed on a substrate, and ions are implanted into the substrate for the formation of a diffused layer. Ions are then implanted into the surface of the diffused layer and into the surface of the gate electrode for the formation of amorphous layers on the surface of the diffused layer and on the surface of the gate electrode. The amorphous layers are heated for recrystallization. A silicide layer-forming material film is formed at least on the surface of the diffused layer and on the surface of the gate electrode, and they are heated for the formation of a silicide layer through reaction between the surface of the diffused layer, Si in the surface of the gate electrode, and the material film. Finally, the material film remaining unreacted is removed. COPYRIGHT: (C)2005,JPO&NCIPI
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