发明名称 MASK, MANUFACTURING METHOD THEREOF, EXPOSURE APPARATUS, AND EXPOSURE METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a mask, a manufacturing method thereof, and further, an exposure apparatus and a method using the mask wherein an exposure pattern having a small line-width is formed without increasing the aspect ratio of the opening pattern of the mask, and the mask is durable. <P>SOLUTION: The mask has a substrate 13 wherein a plurality of layers 11, 12 having respectively opening patterns 11a, 12a are laminated. An exposure is so performed by passing it from one principal-surface side of the substrate 13 to its other principal-surface side through the portion wherein the opening patters 11a, 12a overlap with each other as to form an exposure pattern P whose line-width Wp is smaller than line-widths t1, t2 of the respective opening patterns 11a, 12a. Since the line-width Wp of the exposure pattern P is controlled in such a manner by the overlap of the opening patters 11a, 12a, the exposure pattern P having the small line-width Wp is obtained without increasing the aspect ratios of the respective opening patterns. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005079450(A) 申请公布日期 2005.03.24
申请号 JP20030310167 申请日期 2003.09.02
申请人 SONY CORP 发明人 HANE HIROKI;MIZUNO SHINICHI
分类号 G03F1/20;G03F7/20;H01L21/027;(IPC1-7):H01L21/027;G03F1/16 主分类号 G03F1/20
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