| 发明名称 |
SPUTTER TARGET |
| 摘要 |
<p>A sputter target is provided to obtain excellent characteristics from a light semi-transmissive layer of a phase transition mask. A sputter target is used for forming a light semi-transmissive layer(3a) of a phase transition mask. The sputter target contains Si and Mo. The content of the Si is in a predetermined range of 70 to 95 mol%, so that the composition of the sputter target is stable. A sputtering process is performed on the sputter target under a nitrogen gas atmosphere.</p> |
| 申请公布号 |
KR100480933(B1) |
申请公布日期 |
2005.03.24 |
| 申请号 |
KR20040037437 |
申请日期 |
2004.05.25 |
| 申请人 |
HOYA CORPORATION |
发明人 |
MITSUI, MASARU;OKADA, KIMIHIRO;SUDA, HIDEKI |
| 分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
| 代理机构 |
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代理人 |
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| 主权项 |
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